US 12,461,019 B2
Photoacoustic gas sensor and pressure sensor
Johannes Manz, Munich (DE); Christoph Glacer, Munich (DE); and David Tumpold, Kirchheim beim München (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Oct. 6, 2022, as Appl. No. 17/938,472.
Application 17/938,472 is a continuation of application No. 16/905,295, filed on Jun. 18, 2020, granted, now 11,519,848.
Claims priority of application No. 19181350 (EP), filed on Jun. 19, 2019.
Prior Publication US 2023/0033615 A1, Feb. 2, 2023
Int. Cl. G01N 21/17 (2006.01); G01L 9/00 (2006.01); G01L 13/02 (2006.01); G01N 29/24 (2006.01); G01N 33/00 (2006.01)
CPC G01N 21/1702 (2013.01) [G01L 9/0073 (2013.01); G01L 13/026 (2013.01); G01N 29/2425 (2013.01); G01N 33/0027 (2013.01); G01N 2021/1704 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A MicroElectroMechanical Systems (MEMS) photoacoustic gas sensor comprising:
a lower sensor group comprising a first backplate and a first membrane configured for generating a first measurement signal;
an upper sensor group coupled to the lower sensor group, the upper sensor group comprising a second backplate and a second membrane configured for generating a second measurement signal; and
an electromagnetic source in communication with a sensing volume of the MEMS photoacoustic gas sensor,
wherein the MEMS photoacoustic gas sensor is configured so that a position of the first backplate and the first membrane is selected independently from a position of the second backplate and the second membrane.