US 12,460,294 B2
Heater design solutions for chemical delivery systems
Davinder Sharma, San Jose, CA (US); Christopher J. Rau, Milpitas, CA (US); Panya Wongsenakhum, Fremont, CA (US); Charlie Damaso, San Jose, CA (US); and Marvin Clayton Brees, Boulder Creek, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/922,279
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Apr. 27, 2021, PCT No. PCT/US2021/029452
§ 371(c)(1), (2) Date Oct. 28, 2022,
PCT Pub. No. WO2021/222292, PCT Pub. Date Nov. 4, 2021.
Claims priority of provisional application 63/018,288, filed on Apr. 30, 2020.
Prior Publication US 2023/0175128 A1, Jun. 8, 2023
Int. Cl. C23C 16/448 (2006.01); C23C 16/455 (2006.01); C23C 16/509 (2006.01); H01L 21/67 (2006.01)
CPC C23C 16/4485 (2013.01) [C23C 16/45561 (2013.01); C23C 16/45565 (2013.01); C23C 16/5096 (2013.01); H01L 21/67017 (2013.01)] 20 Claims
OG exemplary drawing
 
9. A chemical delivery module for supplying process gas to a chemical isolation chamber of a semiconductor substrate processing apparatus, the chemical delivery module comprising:
a canister oven configured to heat a precursor to a predetermined temperature and generate the process gas using the heated precursor;
a control oven configured to receive the process gas via a first gas line and supply the process gas to the chemical isolation chamber via a second gas line for processing the semiconductor substrate, the first gas line extending between an inside surface of the canister oven and an inside surface of the control oven;
a heating element configured to heat a portion of the first gas line between the inside surface of the canister oven and the inside surface of the control oven; and
a controller module configured to detect a temperature of the portion of the first gas line and adjust a heating temperature of the heating element based on the detected temperature.
 
16. A method for processing a semiconductor substrate, the method comprising:
heating a precursor within a canister oven to a predetermined temperature to generate a process gas;
supplying the process gas via a gas line to a chemical isolation chamber in which the semiconductor substrate is processed, the gas line extending between the canister oven and the chemical isolation chamber;
heating a portion of the gas line extending between an inside surface and an outside surface of the canister oven using a heating element;
monitoring a surface temperature of the heating element; and
adjusting a heating temperature of the heating element based on the surface temperature.