US 12,460,117 B2
Cold storage material, refrigerator, device incorporating superconducting coil, and method of manufacturing cold storage material
Takahiro Kawamoto, Kanagawa (JP); Tomoko Eguchi, Kanagawa (JP); Tomohiro Yamashita, Kanagawa (JP); Masaya Hagiwara, Kanagawa (JP); Akiko Saito, Kanagawa (JP); and Daichi Usui, Kanagawa (JP)
Assigned to Niterra Materials Co., Ltd., Yokohama (JP)
Filed by Niterra Materials Co., Ltd., Yokohama (JP)
Filed on Aug. 31, 2022, as Appl. No. 17/900,629.
Application 17/900,629 is a division of application No. 17/211,376, filed on Mar. 24, 2021.
Application 17/211,376 is a continuation of application No. PCT/JP2019/037995, filed on Sep. 26, 2019.
Claims priority of application No. 2018-185628 (JP), filed on Sep. 28, 2018.
Prior Publication US 2023/0002662 A1, Jan. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. F25B 21/00 (2006.01); C09K 5/14 (2006.01); H01F 1/01 (2006.01); B22F 9/08 (2006.01); B22F 9/10 (2006.01); C01G 37/00 (2006.01)
CPC C09K 5/14 (2013.01) [F25B 21/00 (2013.01); H01F 1/017 (2013.01); B22F 9/08 (2013.01); B22F 9/10 (2013.01); C01G 37/006 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A refrigerator comprising a cold storage material, the cold storage material comprising a granular body comprising an intermetallic compound, wherein:
the granular body is manufactured by a process of melt-solidification;
a ThCr2Si2 crystal structure occupies 80% by volume or more in the granular body; and
a crystallite size of the granular body is 70 nm or less;
the granular body has a particle size range of 0.01 mm to 1 mm;
a shape coefficient of the granular body, represented by M/A, is in a range of 1.0 to 5.0 in every projection direction, wherein an area of a projected image of the cold storage material is defined as A and an area of a smallest circumscribed circle circumscribing the projected image is defined as M;
the Th site in the ThCr2Si2 crystal structure is at least one element selected from the group consisting of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Tm, Yb, Lu, Sc, and Y;
the Cr site in the ThCr2Si2 crystal structure is at least one element selected from the group consisting of Ti, V, Fe, Co, Ni, and Cu; and
the Si site in the ThCr2Si2 crystal structure is at least one element selected from Si or Ge.