US 12,459,959 B2
Indium compound, method of producing the same, composition for depositing indium-containing thin film, and indium-containing thin film
Yonghee Kwone, Daejeon (KR); Youngjae Im, Daejeon (KR); Sangyong Jeon, Daejeon (KR); Taeseok Byun, Daejeon (KR); Sangchan Lee, Daejeon (KR); and Sangick Lee, Daejeon (KR)
Assigned to DNF CO., LTD., Daejeon (KR)
Filed by DNF CO., LTD., Daejeon (KR)
Filed on Dec. 27, 2022, as Appl. No. 18/146,939.
Claims priority of application No. 10-2021-0192107 (KR), filed on Dec. 30, 2021.
Prior Publication US 2023/0212196 A1, Jul. 6, 2023
Int. Cl. C07F 5/00 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01)
CPC C07F 5/00 (2013.01) [C23C 16/407 (2013.01); C23C 16/45553 (2013.01)] 12 Claims
 
1. An indium compound represented by the following Chemical Formula 1:

OG Complex Work Unit Chemistry
wherein
L is C1-C6 alkylene;
R1 to R4 are independently of one another hydrogen or C1-C10 alkyl;
R5 and R6 are independently of each other C1-C10 alkyl;
Y is —NR11R12, —OR13, or —SR14; and
R11 to R14 are independently of one another hydrogen, C1-C10 alkyl, or haloC1-C10 alkyl, or R11 and R12 are linked to form a ring.