US 12,459,823 B2
Vanadium silicon carbide film, vanadium silicon carbide film coated member, and manufacturing method of vanadium silicon carbide film coated member
Satoru Habuka, Aichi (JP); and Hiroyuki Matsuoka, Akita (JP)
Assigned to DOWA THERMOTECH CO., LTD., Tokyo (JP)
Appl. No. 17/763,011
Filed by DOWA THERMOTECH CO., LTD., Tokyo (JP)
PCT Filed Sep. 29, 2020, PCT No. PCT/JP2020/036806
§ 371(c)(1), (2) Date Mar. 23, 2022,
PCT Pub. No. WO2021/065865, PCT Pub. Date Apr. 8, 2021.
Claims priority of application No. 2019-180086 (JP), filed on Sep. 30, 2019.
Prior Publication US 2022/0411271 A1, Dec. 29, 2022
Int. Cl. C01B 32/907 (2017.01); C23C 16/32 (2006.01); C23C 16/515 (2006.01)
CPC C01B 32/907 (2017.08) [C23C 16/325 (2013.01); C23C 16/515 (2013.01); C01P 2002/72 (2013.01); C01P 2006/80 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A vanadium silicon carbide film, comprising
vanadium, silicon, and carbon, wherein
the total of a vanadium element concentration, a silicon element concentration, and a carbon element concentration in the film is 93 at % or more,
in the film, the vanadium element concentration is 8 to 30 at %, the silicon element concentration is 8 to 30 at %, and the carbon element concentration is 40 to 80 at %,
the vanadium silicon carbide film does not comprise nitrogen, and
the vanadium element concentration, the silicon element concentration, and the carbon element concentration in the film satisfy (1) Expression below:
(carbon element concentration−vanadium element concentration−silicon element concentration)≥10.0 at %  (1).