| CPC B06B 1/0292 (2013.01) [B06B 1/0666 (2013.01)] | 13 Claims |

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1. An ultrasonic transducer multilayer structure, comprising:
a semiconductor layer stack defining a diode,
a micro-machined ultrasonic transducer, MUT, layer stack being electrically in series with said diode and comprising a first electrically conductive layer, said MUT layer stack disposed at least partly on said diode,
a cavity extending over a region comprising at least a portion of said semiconductor layer stack and said first electrically conductive layer,
wherein said MUT layer stack comprises a membrane extending at least partly over said region.
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