US 12,133,475 B2
Component having a band assembly for individual electron movement over a long distance
Inga Seidler, Aachen (DE); Hendrik Bluhm, Aachen (DE); Lars Schreiber, Aachen (DE); and Matthias Künne, Aachen (DE)
Assigned to Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen, Aachen (DE); and Forschungszentrum Jülich GmbH, Jülich (DE)
Appl. No. 17/636,522
Filed by Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen, Aachen (DE); and Forschungszentrum Jülich GmbH, Jülich (DE)
PCT Filed Sep. 1, 2020, PCT No. PCT/DE2020/100766
§ 371(c)(1), (2) Date Feb. 18, 2022,
PCT Pub. No. WO2021/052531, PCT Pub. Date Mar. 25, 2021.
Claims priority of application No. 10 2019 125 351.9 (DE), filed on Sep. 20, 2019.
Prior Publication US 2022/0293846 A1, Sep. 15, 2022
Int. Cl. H10N 60/10 (2023.01); B82Y 10/00 (2011.01); G06N 10/00 (2022.01); G06N 10/40 (2022.01); H01L 29/40 (2006.01); H01L 29/762 (2006.01)
CPC H10N 60/128 (2023.02) [G06N 10/00 (2019.01); G06N 10/40 (2022.01); H01L 29/401 (2013.01); H01L 29/762 (2013.01); H10N 60/11 (2023.02); B82Y 10/00 (2013.01)] 7 Claims
OG exemplary drawing
 
1. An electronic component, which is designed as a semiconductor structure for moving a quantum dot over a distance, comprising:
a substrate with a two-dimensional electron gas or electron hole gas;
a gate electrode assembly having gate electrodes, which is arranged on a surface of the electronic component, for producing a potential well in the substrate; and
electrical terminals for connecting the gate electrode assembly to voltage sources,
wherein the gate electrodes are electrically insulated from one another by insulating layers and have parallel electrode fingers, and
wherein the parallel electrode fingers are interconnected in a periodically alternating manner, which causes an almost continuous movement of the potential well through the substrate, whereby a quantum dot is transported with this potential well.