US 12,133,472 B2
Magnetic storage device
Katsuhiko Koui, Yokohama Kanagawa (JP); Masaru Toko, Tokyo (JP); Soichi Oikawa, Tokyo (JP); and Hideyuki Sugiyama, Kawasaki Kanagawa (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Aug. 31, 2021, as Appl. No. 17/463,522.
Claims priority of application No. 2021-045389 (JP), filed on Mar. 19, 2021.
Prior Publication US 2022/0302371 A1, Sep. 22, 2022
Int. Cl. H10N 50/80 (2023.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/80 (2023.02) [H01F 10/3259 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetic storage device, comprising:
a magnetoresistance effect element including:
a storage layer having a variable magnetization direction,
a reference layer having a fixed magnetization direction, and
a tunnel barrier layer between the storage and reference layers in a first direction, wherein
the storage layer includes:
a first layer that is magnetic and contacting the tunnel barrier layer,
a second layer that is magnetic and farther from the tunnel barrier layer than is the first layer in the first direction, and
a third layer between the first and second layers in the first direction and including a first portion that is an insulating material or a semiconductor material and a plurality of second portions that are conductive material and surrounded in a plane orthogonal to the first direction by the first portion, the plurality of second portions each extending in the first direction from the first layer to the second layer, wherein
the second layer is a cobalt/platinum artificial lattice layer, an alloy layer of cobalt and platinum, or an alloy layer of cobalt, platinum, and chromium.