US 12,133,417 B2
Displaying substrate, manufacturing method thereof and display panel
Leilei Cheng, Beijing (CN); Yongchao Huang, Beijing (CN); Qinghe Wang, Beijing (CN); Yang Zhang, Beijing (CN); and Bin Zhou, Beijing (CN)
Assigned to HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., Anhui (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 17/432,462
Filed by Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Feb. 24, 2021, PCT No. PCT/CN2021/077695
§ 371(c)(1), (2) Date Aug. 19, 2021,
PCT Pub. No. WO2021/185037, PCT Pub. Date Sep. 23, 2021.
Claims priority of application No. 202010202995.5 (CN), filed on Mar. 20, 2020.
Prior Publication US 2023/0380215 A1, Nov. 23, 2023
Int. Cl. H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/32 (2023.01); H10K 59/80 (2023.01); H10K 59/82 (2023.01); H10K 71/20 (2023.01); H10K 77/10 (2023.01); G02F 1/13 (2006.01)
CPC H10K 59/1201 (2023.02) [H10K 59/1213 (2023.02); H10K 59/32 (2023.02); H10K 59/82 (2023.02); H10K 59/87 (2023.02); H10K 71/20 (2023.02); H10K 77/10 (2023.02); G02F 1/1306 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A displaying substrate, wherein the displaying substrate comprises an active area and a non-active area at least located on one side of the active area; the displaying substrate further comprises a passivation layer and a flat layer covering the passivation layer, and the passivation layer and the flat layer are located in the active area and the non-active area;
the flat layer comprises a first flat via hole in the non-active area and a plurality of second flat via holes in the active area;
the passivation layer comprises a first passivation via hole located in the non-active area, and the first flat via hole and the first passivation via hole form a first sleeve hole; and
the hole depth of the first flat via hole is smaller than that of each second flat via hole, and the hole depth of the first passivation via hole is greater than or equal to the difference between the maximum hole depth of the second flat via holes and the hole depth of the first flat via hole.