US 12,133,407 B2
Electroluminescent device having window
Myoung Seo Park, Seoul (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Aug. 19, 2021, as Appl. No. 17/406,606.
Application 17/406,606 is a continuation of application No. 17/203,549, filed on Mar. 16, 2021, granted, now 11,127,920.
Application 17/203,549 is a continuation of application No. 17/112,211, filed on Dec. 4, 2020, granted, now 11,444,261.
Application 17/112,211 is a continuation of application No. 16/131,550, filed on Sep. 14, 2018, abandoned.
Application 16/131,550 is a continuation of application No. 15/976,210, filed on May 10, 2018, granted, now 10,978,666, issued on Apr. 13, 2021.
Claims priority of application No. 10-2018-0002480 (KR), filed on Jan. 8, 2018.
Prior Publication US 2021/0384460 A1, Dec. 9, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H10K 50/84 (2023.01); G06F 3/041 (2006.01); G06F 3/044 (2006.01); G09G 3/3233 (2016.01); H10K 59/131 (2023.01); H10K 59/40 (2023.01); H10K 59/65 (2023.01); H10K 77/10 (2023.01); H10K 102/00 (2023.01)
CPC H10K 50/84 (2023.02) [G06F 3/0412 (2013.01); G06F 3/0443 (2019.05); G06F 3/0446 (2019.05); H10K 59/131 (2023.02); H10K 59/40 (2023.02); H10K 59/65 (2023.02); H10K 77/111 (2023.02); G06F 3/044 (2013.01); G06F 2203/04111 (2013.01); G09G 3/3233 (2013.01); G09G 2320/0233 (2013.01); H10K 2102/311 (2023.02)] 11 Claims
OG exemplary drawing
 
6. An after-manufactured electroluminescent device, comprising:
a lower structure including a non-transparent emission area; and
an encapsulation structure located on the lower structure, wherein
the lower structure includes a light transmitting region surrounded by the non-transparent emission area in plan view, the light transmitting region having a light transmittance greater than the non-transparent emission area,
the lower structure includes an electroluminescent unit having a first electrode, an intermediate layer located on the first electrode, and a second electrode located on the intermediate layer,
the lower structure includes a first wire extending in a direction from the non-transparent emission area toward a first side of the light transmitting region and a second wire extending in a direction away from a second side of the light transmitting region, the second side of the light transmitting region facing the first side of the light transmitting region toward the non-transparent emission area,
the light transmitting region is located between the first and second wires,
the first and second wires are located on a same layer,
the first and second wires overlap the non-transparent emission area,
the first and second wires supply a driving current to the first electrode or the second electrode,
the first and second wires have a same driving current state,
the lower structure has an outer non-emission area surrounding the non-transparent emission area in plan view,
the encapsulation structure has an inorganic lower surface,
the outer non-emission area has an outer inorganic surface portion surrounding the non-transparent emission area in plan view and making a direct contact with the inorganic lower surface to form an inorganic-inorganic contact region surrounding the non-transparent emission area in plan view,
the lower structure comprises an inorganic structure having a buffer layer on which a transistor is located,
a portion of the buffer layer corresponding the light transmitting region is present and permanently remains so that the buffer layer overlaps the light transmitting region,
a portion of the encapsulation structure corresponding the light transmitting region is present and permanently remains so that the encapsulation structure overlaps the light transmitting region,
the encapsulation structure comprises a first inorganic layer, an organic layer on the first inorganic layer, and a second inorganic layer on the organic layer,
the inorganic lower surface of the encapsulation structure has a first portion corresponding the non-transparent emission area of the lower structure and a second portion corresponding the light transmitting region of the lower structure, the first portion of the inorganic lower surface being higher than the second portion of the inorganic lower surface,
the after-manufactured electroluminescent device further comprises a touch panel located on the encapsulation structure in a way such that the lower structure, the encapsulation structure, and the touch panel are sequentially stacked,
the organic layer has an organic lower surface,
the organic lower surface has a first portion corresponding the non-transparent emission area of the lower structure and a second portion corresponding the light transmitting region of the lower structure, the first portion of the organic lower surface being higher than the second portion of the organic lower surface,
a distance measured between the buffer layer and the encapsulation structure in the non-transparent emission area is greater than a distance measured between the portion of the buffer layer and the portion of the encapsulation structure in the light transmitting region, and
the second portion of the inorganic lower surface is lower than an upper surface of the first electrode, but the second portion of the inorganic lower surface is higher than an upper surface of the buffer layer.