US 12,133,393 B2
Method of manufacturing semiconductor device
Do Young Choi, Hwaseong-si (KR); Kab Jin Nam, Seoul (KR); In Bong Pok, Hwaseong-si (KR); Dae Won Ha, Seoul (KR); and Musarrat Hasan, Sejong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 15, 2021, as Appl. No. 17/502,380.
Claims priority of application No. 10-2021-0037773 (KR), filed on Mar. 24, 2021.
Prior Publication US 2022/0310654 A1, Sep. 29, 2022
Int. Cl. H01L 27/11592 (2017.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 27/1159 (2017.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10B 51/30 (2023.01); H10B 51/40 (2023.01)
CPC H10B 51/40 (2023.02) [H01L 21/0259 (2013.01); H01L 29/0665 (2013.01); H01L 29/40111 (2019.08); H01L 29/42392 (2013.01); H01L 29/516 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/66795 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01); H10B 51/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
providing a substrate including a first region and a second region such that the second region is separated from the first region;
forming a metal oxide film on the first region of the substrate and the second region of the substrate;
forming an upper metal material film on the metal oxide film on the first region of the substrate such that the upper metal material film does not overlap the metal oxide film on the second region of the substrate and the metal oxide film of the second region is exposed; and
simultaneously annealing the upper metal material film and the exposed metal oxide film to form a ferroelectric insulating film on the first region of the substrate and form a paraelectric insulating film on the second region of the substrate.