US 12,133,384 B2
Semiconductor device
Junhyoung Kim, Seoul (KR); Jisung Cheon, Ansan-si (KR); Yoonhwan Son, Seoul (KR); and Seungmin Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 13, 2023, as Appl. No. 18/352,182.
Application 18/352,182 is a continuation of application No. 17/897,255, filed on Aug. 29, 2022, granted, now 11,737,270.
Application 17/897,255 is a continuation of application No. 17/032,128, filed on Sep. 25, 2020, granted, now 11,437,396, issued on Sep. 6, 2022.
Claims priority of application No. 10-2020-0037079 (KR), filed on Mar. 26, 2020.
Prior Publication US 2023/0363157 A1, Nov. 9, 2023
Int. Cl. H10B 43/20 (2023.01); H10B 43/30 (2023.01); H10B 43/40 (2023.01)
CPC H10B 43/20 (2023.02) [H10B 43/30 (2023.02); H10B 43/40 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a lower structure;
a pattern structure on the lower structure;
a first stack structure and a second stack structure on the lower structure
a separation structure penetrating through the first stack structure;
a memory vertical structure penetrating through the first stack structure and contacting the pattern structure; and
a contact plug penetrating through the second stack structure,
wherein the first stack structure includes first insulating layers and conductive layers alternately stacked in a vertical direction,
wherein the second stack structure includes second insulating layers and third insulating layers alternately stacked in the vertical direction,
wherein the third insulating layers include a material different from a material of the second insulating layers,
wherein the contact plug includes:
a first plug portion penetrating through a plurality of lower insulating layers of the third insulating layers; and
a second plug portion penetrating through a plurality of upper insulating layers of the third insulating layers, and
wherein a lateral surface of the contact plug includes a bent portion between a lateral surface of the first plug portion and a lateral surface of the second plug portion.