US 12,133,383 B2
Memory cell and method used in forming a memory cells
Venkatakrishnan Sriraman, Singapore (SG); Dae Hong Eom, Singapore (SG); Ramanathan Gandhi, Boise, ID (US); Donghua Li, Singapore (SG); and Ashok Kumar Muthukumaran, Singapore (SG)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 10, 2023, as Appl. No. 18/506,889.
Application 18/506,889 is a division of application No. 17/391,377, filed on Aug. 2, 2021, granted, now 11,856,766.
Prior Publication US 2024/0081053 A1, Mar. 7, 2024
Int. Cl. H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H10B 41/27 (2023.02) [H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/788 (2013.01); H01L 29/792 (2013.01); H10B 43/27 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A method used in forming a memory cell, comprising:
forming channel material;
forming charge-passage material;
forming programmable material;
forming a charge-blocking region;
forming a control gate; and
the programmable material being formed to comprise at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0, the forming of the programmable material comprising one of “a” and “b”, where:
(a): forming the SiNx; and
exposing the SiNx to oxygen-containing material to transform some of the SiNx to the SiOy that is directly against remaining of the SiNx; and
(b): forming the SiNx; and
depositing the SiOy against the SiNx by one of chemical vapor deposition, atomic layer deposition, or physical vapor deposition.