US 12,133,009 B2
Image sensor, image sensing system, and image sensing method
Jeong Soon Kang, Gumi-si (KR); Hyun Cheol Kim, Seoul (KR); Woo Bin Song, Hwaseong-si (KR); and Kyung Hwan Lee, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 21, 2022, as Appl. No. 18/086,449.
Claims priority of application No. 10-2022-0023058 (KR), filed on Feb. 22, 2022.
Prior Publication US 2023/0269501 A1, Aug. 24, 2023
Int. Cl. H04N 25/77 (2023.01); H04N 25/51 (2023.01); H04N 25/59 (2023.01); H04N 25/709 (2023.01); H04N 25/76 (2023.01)
CPC H04N 25/77 (2023.01) [H04N 25/709 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a photoelectric converter configured to convert received light into charges in response to the received light and provide the charges to a first node;
a transfer transistor configured to provide a voltage of the first node to a floating diffusion node;
a reset transistor configured to reset a voltage of the floating diffusion node to a driving voltage based on a reset signal;
a source follower transistor configured to provide a unit pixel output based on the voltage of the floating diffusion node;
a select transistor connected to the source follower transistor and gated with a selection signal to output the unit pixel output to the outside; and
a ferroelectric capacitor connected to the floating diffusion node,
wherein the ferroelectric capacitor is configured to adjust a conversion gain of the floating diffusion node based on a conversion gain mode of the ferroelectric capacitor, the conversion gain mode being a first conversion gain mode, a second conversion gain mode, or a third conversion gain mode.