CPC H04N 25/77 (2023.01) [H04N 25/709 (2023.01)] | 20 Claims |
1. An image sensor comprising:
a photoelectric converter configured to convert received light into charges in response to the received light and provide the charges to a first node;
a transfer transistor configured to provide a voltage of the first node to a floating diffusion node;
a reset transistor configured to reset a voltage of the floating diffusion node to a driving voltage based on a reset signal;
a source follower transistor configured to provide a unit pixel output based on the voltage of the floating diffusion node;
a select transistor connected to the source follower transistor and gated with a selection signal to output the unit pixel output to the outside; and
a ferroelectric capacitor connected to the floating diffusion node,
wherein the ferroelectric capacitor is configured to adjust a conversion gain of the floating diffusion node based on a conversion gain mode of the ferroelectric capacitor, the conversion gain mode being a first conversion gain mode, a second conversion gain mode, or a third conversion gain mode.
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