US 12,132,448 B2
Gallium nitride transimpedance amplifier
Cher-Ming Tan, Taoyuan (TW); and Vimal Kant Pandey, Taoyuan (TW)
Assigned to Chang Gung University, Taoyuan (TW)
Filed by Chang Gung University, Taoyuan (TW)
Filed on Jul. 12, 2021, as Appl. No. 17/372,569.
Claims priority of application No. 109138222 (TW), filed on Nov. 3, 2020.
Prior Publication US 2022/0140790 A1, May 5, 2022
Int. Cl. H03F 1/10 (2006.01); G01T 1/17 (2006.01); H01L 29/20 (2006.01); H03F 3/193 (2006.01)
CPC H03F 1/10 (2013.01) [G01T 1/17 (2013.01); H01L 29/2003 (2013.01); H03F 3/193 (2013.01); H03F 2200/451 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A gallium nitride amplifier circuit, wherein said gallium nitride amplifier circuit accepts a plurality of currents and outputs a plurality of voltages, and
wherein said gallium nitride amplifier circuit comprises a first transistor, a second transistor, a third transistor, a first resistor and a second resistor, said first resistor electrically connecting said second resistor and a drain electrode of said first transistor, a gate electrode of said third transistor electrically connecting a source electrode of said first transistor and a drain electrode of said second transistor, said second resistor electrically connecting a gate electrode of said first transistor and a drain electrode of said third transistor, an input current flowing through a source electrode of said first transistor.