US 12,132,158 B2
Optoelectronic component with a transparent bond between two joining partners and method of manufacturing the same
Richard Scheicher, Thierhaupten (DE); Thomas Huettmayer, Diedorf (DE); Ivar Tangring, Regensburg (DE); Angela Eberhardt, Augsburg (DE); and Florian Peskoller, Ingolstadt (DE)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Appl. No. 17/432,429
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Feb. 13, 2020, PCT No. PCT/EP2020/053764
§ 371(c)(1), (2) Date Aug. 19, 2021,
PCT Pub. No. WO2020/178000, PCT Pub. Date Sep. 10, 2020.
Claims priority of application No. 10 2019 105 831.7 (DE), filed on Mar. 7, 2019.
Prior Publication US 2022/0077369 A1, Mar. 10, 2022
Int. Cl. H01L 33/62 (2010.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/44 (2010.01); H01L 33/58 (2010.01)
CPC H01L 33/62 (2013.01) [H01L 33/005 (2013.01); H01L 33/22 (2013.01); H01L 33/44 (2013.01); H01L 33/58 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An optoelectronic component comprising:
a first joining partner comprising an LED chip with a structured light-emitting surface and a compensation layer applied to the light-emitting surface, wherein the compensation layer has a surface facing away from the light-emitting surface and spaced apart from the light-emitting surface, and wherein the surface forms a first connecting surface;
a second joining partner having a second connecting surface, the first and second connecting surfaces being arranged so that they face each other; and
a bonding layer made of a film of low-melting glass having a layer thickness of not more than 1 μm, wherein the bonding layer bonds the first and second connecting surfaces together,
wherein a structure of the light-emitting surface is encapsulated within the compensation layer such that the structure of the light-emitting surface is vertically displaced from a top surface of the compensation layer,
wherein the first and second connecting surfaces are smooth such that their surface roughness, expressed as center-line roughness, is less than or equal to 50 nm,
wherein the LED chip comprises a semiconductor layer having the light-emitting surface,
wherein a refractive index of the compensation layer is smaller than a refractive index of the semiconductor layer and greater than a refractive index of a material forming the second joining partner.