US 12,132,155 B2
Etched trenches in bond materials for die singulation, and associated systems and methods
Vladimir Odnoblyudov, Eagle, ID (US); Scott D. Schellhammer, Meridian, ID (US); and Jeremy S. Frei, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 11, 2021, as Appl. No. 17/145,752.
Application 16/008,836 is a division of application No. 14/617,668, filed on Feb. 9, 2015, granted, now 10,020,432, issued on Jul. 10, 2018.
Application 14/617,668 is a division of application No. 13/415,677, filed on Mar. 8, 2012, granted, now 8,952,413, issued on Feb. 10, 2015.
Application 17/145,752 is a continuation of application No. 16/008,836, filed on Jun. 14, 2018, granted, now 10,892,384.
Prior Publication US 2021/0135067 A1, May 6, 2021
Int. Cl. H01L 33/52 (2010.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01); H01S 5/02 (2006.01); H10K 50/84 (2023.01); H10K 50/844 (2023.01); H10K 71/00 (2023.01)
CPC H01L 33/52 (2013.01) [H01L 21/561 (2013.01); H01L 21/78 (2013.01); H01L 23/3185 (2013.01); H01L 33/0095 (2013.01); H01L 33/20 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01S 5/0201 (2013.01); H01L 21/6836 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/97 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68377 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/97 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/12044 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0066 (2013.01); H10K 50/84 (2023.02); H10K 50/844 (2023.02); H10K 71/00 (2023.02); H10K 71/851 (2023.02); Y02P 80/30 (2015.11)] 20 Claims
OG exemplary drawing
 
1. A solid state transducer (SST) device, comprising:
a SST die including a layer of first semiconductor material a layer of second semiconductor material, and a layer of active material disposed between the layers of first and second semiconductor materials;
a carrier substrate;
a bond material directly bonding the layer of second semiconductor material and the carrier substrate, the bond material having concave sidewalls extending between the layer of second semiconductor material and the carrier substrate; and
a protective material encapsulating at least the concave sidewalls of the bond material, the protective material having vertical sidewalls, the vertical sidewalls extending below an upper surface of the carrier substrate,
wherein the SST die has a first width along a lateral axis, the carrier substrate has a second width along the lateral axis greater than the first width, and the bond material has a third width along the lateral axis, measured between recessed regions of opposite ones of the concave sidewalls, less than the first width.
 
14. A solid state transducer (SST) device, comprising:
a SST die having a first width along a lateral axis, the SST die including a layer of first semiconductor material a layer of second semiconductor material, and a layer of active material disposed between the layers of first and second semiconductor materials;
a carrier substrate having a second width along the lateral axis greater than the first width;
a bond material directly bonding the layer of second semiconductor material and the carrier substrate, wherein the bond material has outer surfaces intersecting the lateral axis with opposing concave profiles; and
a protective material encapsulating at least the outer surfaces of the bond material with opposing concave profiles, the protective material having sidewalls with a vertical portion alongside the SST die and a curvilinear portion generally following a curvature of an indentation in the carrier substrate.