CPC H01L 33/504 (2013.01) [H01L 33/0095 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 2933/0041 (2013.01)] | 20 Claims |
1. A semiconductor light emitting device comprising:
a light-emitting diode (LED) chip having a lower surface on which a first electrode and a second electrode are arranged, an upper surface opposite to the lower surface, and a side surface between the upper surface and the lower surface;
a first conductive bump disposed on the first electrode and a second conductive bump disposed on the second electrode;
a first wavelength conversion layer having a first region provided on the upper surface of the LED chip and a second region which extends past the side surface of the LED chip;
a second wavelength conversion layer having a first surface contacting the side surface of the LED chip, a second surface opposite to the first surface, a third surface connecting the first surface and the second surface, and contacting the second region, and a fourth surface located opposite to the third surface and inclined; and
a reflective resin portion provided on the lower surface of the LED chip and the fourth surface, and defining openings that expose at least a portion of each of the first conductive bump and the second conductive bump,
wherein a side surface of the first wavelength conversion layer, the second surface of the second wavelength conversion layer, and a side surface of the reflective resin portion are coplanar.
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