US 12,132,148 B2
Light emitting device for display and display apparatus having the same
Seong Kyu Jang, Ansan-si (KR); Chan Seob Shin, Ansan-si (KR); Seom Geun Lee, Ansan-si (KR); and Ho Joon Lee, Ansan-si (KR)
Assigned to SEOUL VIOSYS CO., LTD., Ansan-si (KR)
Filed by SEOUL VIOSYS CO., LTD., Ansan-si (KR)
Filed on Nov. 28, 2021, as Appl. No. 17/536,074.
Application 17/536,074 is a continuation of application No. 16/815,823, filed on Mar. 11, 2020, granted, now 11,211,528.
Claims priority of provisional application 62/817,704, filed on Mar. 13, 2019.
Prior Publication US 2022/0158031 A1, May 19, 2022
Int. Cl. H01L 33/24 (2010.01); H01L 25/075 (2006.01); H01L 33/62 (2010.01); G02B 27/01 (2006.01); G06F 1/16 (2006.01)
CPC H01L 33/24 (2013.01) [H01L 25/0753 (2013.01); H01L 33/62 (2013.01); G02B 27/0172 (2013.01); G02B 2027/0178 (2013.01); G06F 1/163 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of fabricating a light emitting device for a display, comprising:
growing a first LED stack on a first growth substrate, the first LED stack comprising a first conductivity type semiconductor layer and a second conductivity type semiconductor layer;
growing a second LED stack on a second growth substrate, the second LED stack comprising a first conductivity type semiconductor layer and a second conductivity type semiconductor layer;
bonding the second LED stack to a first temporary substrate;
removing the second growth substrate from the second LED stack;
bonding the second LED stack to the first LED stack;
removing the first temporary substrate from the second LED stack;
forming a transparent electrode on the first LED stack before bonding the second LED stack to the first LED stack; and
forming a transparent electrode on the second conductivity type semiconductor layer of the second LED stack before bonding the second LED stack to the first temporary substrate.