US 12,132,138 B2
Solar cell, manufacturing method thereof, and photovoltaic module
Kun Yu, Zhejiang (CN); Changming Liu, Zhejiang (CN); and Xinyu Zhang, Zhejiang (CN)
Assigned to SHANGHAI JINKO GREEN ENERGY ENTERPRISE MANAGEMENT CO., LTD., Shanghai (CN); and ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN)
Filed by SHANGHAI JINKO GREEN ENERGY ENTERPRISE MANAGEMENT CO., LTD., Shanghai (CN); and ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN)
Filed on Sep. 12, 2023, as Appl. No. 18/367,235.
Application 17/964,190 is a division of application No. 17/459,689, filed on Aug. 27, 2021, granted, now 11,581,454, issued on Feb. 14, 2023.
Application 18/367,235 is a continuation of application No. 18/071,430, filed on Nov. 29, 2022, granted, now 11,843,071.
Application 18/071,430 is a continuation in part of application No. 17/964,190, filed on Oct. 12, 2022, granted, now 11,824,136.
Claims priority of application No. 202110895225.8 (CN), filed on Aug. 4, 2021.
Prior Publication US 2024/0006550 A1, Jan. 4, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/18 (2006.01); H01L 31/0236 (2006.01); H01L 31/0368 (2006.01); H01L 31/068 (2012.01)
CPC H01L 31/1868 (2013.01) [H01L 31/02366 (2013.01); H01L 31/03685 (2013.01); H01L 31/068 (2013.01); H01L 31/1824 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a semiconductor substrate, wherein a rear surface of the semiconductor substrate includes non-pyramid-shaped microstructures, the non-pyramid-shaped microstructures include two or more first substructures at least partially stacked on one another, a surface of the first substructure is a polygonal plane, and a one-dimensional size of the surface of the outermost first substructure is less than or equal to 45 μm;
a first passivation layer located on a front surface of the semiconductor substrate;
a first tunnel oxide layer and a second tunnel oxide layer located on the non-pyramid-shaped microstructures of the rear surface of the semiconductor substrate;
a first doped conductive layer located on a surface of the first tunnel oxide layer, and a second doped conductive layer located on a surface of the second tunnel oxide layer, wherein the first doped conductive layer has a conductive type different from the second doped conductive layer;
a second passivation layer located on a surface of the first and second doped conductive layers; and
electrodes formed by penetrating through the second passivation layer to be in contact with the first and second doped conductive layers.