US 12,132,137 B2
Continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices
Oren Steinberg, Tal Shahar (IL); Anders Gösta Larsson, Haovas (SE); Attila Fülöp, Gothenburg (SE); Elad Mentovich, Tel Aviv (IL); Isabelle Cestier, Haifa (IL); and Moshe B. Oron, Rehovot (IL)
Assigned to Mellanox Technologies, Ltd., Yokneam (IL)
Filed by Mellanox Technologies, Ltd., Yokneam (IL)
Filed on Aug. 5, 2022, as Appl. No. 17/881,927.
Prior Publication US 2024/0047603 A1, Feb. 8, 2024
Int. Cl. H01L 31/18 (2006.01); H01L 31/0304 (2006.01); H01L 31/109 (2006.01)
CPC H01L 31/1848 (2013.01) [H01L 31/03048 (2013.01); H01L 31/109 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming, onto one or more semiconductor layers of an electro-optical semiconductor device, a first semiconductor layer associated with a first bandgap value;
forming, onto the first semiconductor layer, a grading layer comprising a plurality of layers defining a continuous compositional grading; and
forming, onto the grading layer, a second semiconductor layer associated with a second bandgap value,
wherein the second bandgap value is different than the first bandgap value.