US 12,132,133 B2
Avalanche photodetectors and image sensors including the same
Sanghyun Jo, Seoul (KR); Jaeho Lee, Seoul (KR); Haeryong Kim, Seongnam-si (KR); and Hyeonjin Shin, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 21, 2023, as Appl. No. 18/338,631.
Application 18/338,631 is a continuation of application No. 17/857,466, filed on Jul. 5, 2022, granted, now 11,721,781.
Application 17/857,466 is a continuation of application No. 15/942,659, filed on Apr. 2, 2018, granted, now 11,417,790, issued on Aug. 16, 2022.
Claims priority of application No. 10-2017-0157506 (KR), filed on Nov. 23, 2017.
Prior Publication US 2023/0335665 A1, Oct. 19, 2023
Int. Cl. H01L 29/66 (2006.01); G01S 7/481 (2006.01); G01S 17/931 (2020.01); H01L 27/146 (2006.01); H01L 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 31/032 (2006.01); H01L 31/0352 (2006.01); H01L 31/101 (2006.01); H01L 31/107 (2006.01); H01S 5/0687 (2006.01); H10K 39/32 (2023.01); G05D 1/00 (2006.01); H01L 31/0256 (2006.01); H01L 31/0296 (2006.01); H01L 31/0304 (2006.01); H01L 31/0312 (2006.01)
CPC H01L 31/1075 (2013.01) [G01S 7/4816 (2013.01); G01S 7/4817 (2013.01); G01S 17/931 (2020.01); H01L 27/14643 (2013.01); H01L 27/14647 (2013.01); H01L 31/02027 (2013.01); H01L 31/022466 (2013.01); H01L 31/028 (2013.01); H01L 31/032 (2013.01); H01L 31/035209 (2013.01); H01L 31/035281 (2013.01); H01L 31/03529 (2013.01); H01L 31/1013 (2013.01); H01S 5/0687 (2013.01); H10K 39/32 (2023.02); G05D 1/024 (2013.01); H01L 31/0296 (2013.01); H01L 31/0304 (2013.01); H01L 31/0312 (2013.01); H01L 31/0324 (2013.01); H01L 2031/0344 (2013.01); H01L 31/035218 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A light detection and ranging (LiDAR) system, comprising:
a wavelength-tunable laser diode (LD) configured to emit a light beam;
an optical phased array (OPA) configured to receive the emitted light beam as an input optical signal and output an optical signal into an environment based on receiving the input optical signal from the LD;
a receiver configured to receive an optical signal output from the OPA and reflected from an object; and
a controller configured to control the wavelength-tunable LD, the OPA, and the receiver,
wherein the receiver includes at least one photodetector, the at least one photodetector including:
a first electrode;
a collector layer on the first electrode;
a tunnel barrier layer on the collector layer;
a graphene layer on the tunnel barrier layer;
an emitter layer on the graphene layer; and
a second electrode on the emitter layer,
wherein the collector layer includes a first semiconductor material and the emitter layer includes a second semiconductor material,
wherein at least one semiconductor material of the first semiconductor material and the second semiconductor material includes a transition metal dichalcogenide that is a compound of a transition metal and a chalcogen element that is one of S, Se, or Te,
wherein the emitter layer has a thickness of about 0.3 nm to about 1 μm such that the emitter layer absorbs light and moves electrons and holes, and
wherein the tunnel barrier layer has a thickness of about 0.3 nm to about 1 μm.