US 12,132,109 B2
Ferroelectric semiconductor device and method of extracting defect density of the same
Hagyoul Bae, Hanam-si (KR); Seunggeol Nam, Suwon-si (KR); Jinseong Heo, Seoul (KR); Sanghyun Jo, Seoul (KR); and Dukhyun Choe, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 22, 2022, as Appl. No. 17/677,654.
Claims priority of application No. 10-2021-0125215 (KR), filed on Sep. 17, 2021.
Prior Publication US 2023/0093076 A1, Mar. 23, 2023
Int. Cl. H01L 29/06 (2006.01); H01L 21/66 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/78391 (2014.09) [H01L 22/12 (2013.01); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A ferroelectric electronic device comprising:
a first layer;
an insulating layer including a first interface and a ferroelectric layer, the first interface adjacent to the first layer, the insulating layer further including a paraelectric layer corresponding to the first interface with the first layer, the paraelectric layer between the first layer and the ferroelectric layer; and
an upper electrode over the insulating layer,
wherein the insulating layer has a bulk defect density per volume of 1016 cm−3eV−1 or more and an interface defect density per area of 1010 cm−2eV−1 or more, and
wherein the paraelectric layer includes at least one of SiO, AlO, SiON, SiN, a native oxide of Ge, or a native oxide of Si.