US 12,132,105 B2
Semiconductor device and method for fabricating the same
Hojun Choi, Anyang-si (KR); Ji Seong Kim, Eumseong-gun (KR); Min Cheol Oh, Seoul (KR); and Ki-Il Kim, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 10, 2022, as Appl. No. 17/571,949.
Claims priority of provisional application 63/170,049, filed on Apr. 2, 2021.
Claims priority of application No. 10-2021-0096226 (KR), filed on Jul. 22, 2021.
Prior Publication US 2022/0320335 A1, Oct. 6, 2022
Int. Cl. H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/7827 (2013.01) [H01L 21/823814 (2013.01); H01L 21/823885 (2013.01); H01L 27/092 (2013.01); H01L 29/0847 (2013.01); H01L 29/42368 (2013.01); H01L 29/66666 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an active pattern protruding from a substrate, the active pattern including a first long sidewall and a second long sidewall, the first long sidewall and the second long sidewall extending in a first direction and opposite to each other in a second direction;
a lower epitaxial pattern on the substrate and covering a part of the active pattern;
a gate electrode on the lower epitaxial pattern and extending along the first and second long sidewalls of the active pattern; and
an upper epitaxial pattern on the active pattern and connected to an upper surface of the active pattern,
wherein the active pattern includes short sidewalls connecting with the first and second long sidewalls of the active pattern,
at least one of the short sidewalls of the active pattern has a curved surface, and
a length of the first long sidewall is greater than a length of the second long sidewall.