| CPC H01L 29/6681 (2013.01) [H01L 29/1033 (2013.01); H01L 29/41791 (2013.01); H01L 29/7851 (2013.01)] | 20 Claims |
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1. A semiconductor device, comprising:
a first active region extending in a first direction and having a first width in a second direction, the second direction being perpendicular to the first direction;
a second active region extending in the first direction and having a second width in the second direction, the second width being greater than the first width;
a connection region connected to both of the first active region and the second active region, the connection region having a third width in the second direction, the third width being greater than the first width and less than the second width;
a first gate structure intersecting the first active region and extending in the second direction;
a second gate structure intersecting the second active region and extending in the second direction;
a dummy structure intersecting at least a portion of the connection region, the dummy structure extending in the second direction, the dummy structure being between the first and second gate structures in the first direction; and
source/drain regions on the first active region, the second active region, and the connection region, the source/drain regions being on at least one side of each of the first and second gate structures and at least one side of the dummy structure,
wherein the dummy structure includes
a first pattern portion isolated from direct contact with a side surface of the first gate structure by a first distance in the first direction, and
a second pattern portion isolated from direct contact with the side surface of the first gate structure by a second distance in the first direction, the second distance being greater than the first distance.
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