US 12,132,090 B2
Semiconductor device
Akio Suzuki, Kanagawa (JP); Shinpei Matsuda, Kanagawa (JP); and Shunpei Yamazaki, Setagaya (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Sep. 22, 2023, as Appl. No. 18/371,814.
Application 18/371,814 is a division of application No. 17/324,386, filed on May 19, 2021, granted, now 11,777,005, issued on Oct. 3, 2023.
Application 17/324,386 is a continuation of application No. 16/572,673, filed on Sep. 17, 2019, granted, now 11,049,946, issued on Jun. 29, 2021.
Application 16/572,673 is a continuation of application No. 15/251,382, filed on Aug. 30, 2016, granted, now 10,483,365, issued on Nov. 19, 2019.
Claims priority of application No. 2015-170612 (JP), filed on Aug. 31, 2015.
Prior Publication US 2024/0021688 A1, Jan. 18, 2024
Int. Cl. H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); H01L 29/788 (2006.01); H10B 41/70 (2023.01)
CPC H01L 29/42324 (2013.01) [H01L 29/0673 (2013.01); H01L 29/40114 (2019.08); H01L 29/42384 (2013.01); H01L 29/42392 (2013.01); H01L 29/66969 (2013.01); H01L 29/775 (2013.01); H01L 29/7786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H01L 29/7883 (2013.01); H10B 41/70 (2023.02)] 6 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first conductor, the first conductor being a first circular-arc-shaped conductor;
an oxide semiconductor comprising a region extending through an inside of a ring of the first conductor;
a first insulator between the first conductor and the oxide semiconductor;
a second insulator between the first conductor and the first insulator; and
a second conductor, the second conductor being a first ring-shaped conductor,
wherein the second conductor is inside the ring of the first conductor,
wherein the second conductor is inside the second insulator,
wherein the second conductor is configured to be in a floating state, and
wherein an inner surface and an outer surface of the second conductor are in contact with the second insulator.