US 12,132,086 B2
Semiconductor devices with dissimlar materials and methods
Gordon M. Grivna, Mesa, AZ (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed on Oct. 2, 2023, as Appl. No. 18/479,630.
Application 18/062,152 is a division of application No. 16/948,491, filed on Sep. 21, 2020, granted, now 11,563,091, issued on Jan. 24, 2023.
Application 18/479,630 is a continuation of application No. 18/062,152, filed on Dec. 6, 2022, granted, now 11,810,954.
Prior Publication US 2024/0030293 A1, Jan. 25, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/165 (2006.01); H01L 21/285 (2006.01); H01L 29/06 (2006.01); H01L 49/02 (2006.01)
CPC H01L 29/165 (2013.01) [H01L 21/28562 (2013.01); H01L 28/55 (2013.01); H01L 28/60 (2013.01); H01L 29/0688 (2013.01); H01L 28/40 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing an electronic device, comprising:
providing a work piece comprising a first material, a first side, a second side opposite to the first side, and a first coefficient of thermal expansion (a first CTE);
providing recesses extending into the work piece from the first side and comprising a pattern;
providing a second material comprising a second CTE within the recesses and over the first material between the recesses; and
providing a third material comprising a third CTE over one of the second side or the second material;
wherein:
the third CTE and the second CTE are different than the first CTE.