US 12,132,057 B2
Semiconductor device with transistors including oxide semiconductors and capacitor elements
Hitoshi Kunitake, Kanagawa (JP); Tatsuya Onuki, Kanagawa (JP); Hajime Kimura, Kanagawa (JP); Takayuki Ikeda, Kanagawa (JP); and Shunpei Yamazaki, Tokyo (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., (JP)
Appl. No. 17/639,744
Filed by Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
PCT Filed Aug. 26, 2020, PCT No. PCT/IB2020/057946
§ 371(c)(1), (2) Date Mar. 2, 2022,
PCT Pub. No. WO2021/048672, PCT Pub. Date Mar. 18, 2021.
Claims priority of application No. 2019-163639 (JP), filed on Sep. 9, 2019.
Prior Publication US 2022/0293603 A1, Sep. 15, 2022
Int. Cl. H01L 27/12 (2006.01); H01L 29/786 (2006.01); H10B 12/00 (2023.01)
CPC H01L 27/1255 (2013.01) [H01L 27/1225 (2013.01); H01L 29/78648 (2013.01); H01L 29/7869 (2013.01); H10B 12/00 (2023.02)] 11 Claims
OG exemplary drawing
 
9. A semiconductor device comprising:
a first transistor comprising:
a first oxide semiconductor film;
a first gate insulator over the first oxide semiconductor film;
a first gate electrode over the first gate insulator;
a first source electrode; and
a first drain electrode;
a second transistor comprising:
a second oxide semiconductor film;
a second gate insulator over the second oxide semiconductor film;
a second gate electrode over the second gate insulator;
a second source electrode; and
a second drain electrode;
a third transistor comprising:
the first oxide semiconductor film; and
a third gate electrode over the first oxide semiconductor film;
a fourth transistor comprising:
the second oxide semiconductor film;
a fourth gate electrode over the second oxide semiconductor film;
a third source electrode; and
a third drain electrode;
a first insulator over the first oxide semiconductor film and the second oxide semiconductor film, the first insulator comprising:
a first opening reaching the first oxide semiconductor film, where each of the first gate insulator and the first gate electrode is positioned in the first opening;
a second opening reaching the second oxide semiconductor film, where each of the second gate insulator and the second gate electrode is positioned in the second opening;
a third opening reaching one of the second source electrode and the second drain electrode,
a fourth opening reaching the first oxide semiconductor film, where the third gate electrode is positioned in the fourth opening;
a fifth opening reaching the second oxide semiconductor film, where the fourth gate electrode is positioned in the fifth opening; and
a sixth opening,
a first conductor positioned in the third opening;
a first capacitor element comprising:
a second conductor over and in contact with a top surface of the first conductor, a top surface of the first gate electrode, and a top surface of the first insulator;
a second insulator over the second conductor; and
a third conductor over the second insulator;
a fourth conductor positioned in the sixth opening; and
a second capacitor element comprising:
a fifth conductor over and in contact with a top surface of the fourth conductor, a top surface of the third gate electrode, and a top surface of the first insulator;
a third insulator over the second insulator; and
a sixth conductor over the second insulator,
wherein the one of the second source electrode and the second drain electrode is electrically connected to the first gate electrode via the first conductor, and
wherein the one of the third source electrode and the third drain electrode is electrically connected to the first gate electrode via the first conductor.