US 12,132,056 B2
Display panel and display device
Chaofan Liu, Guangdong (CN); Junzheng Liu, Guangdong (CN); and Kecheng Xie, Guangdong (CN)
Assigned to Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen (CN)
Appl. No. 17/437,318
Filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong (CN)
PCT Filed Jul. 23, 2021, PCT No. PCT/CN2021/108222
§ 371(c)(1), (2) Date Sep. 8, 2021,
PCT Pub. No. WO2022/222296, PCT Pub. Date Oct. 27, 2022.
Claims priority of application No. 202110436172.3 (CN), filed on Apr. 22, 2021.
Prior Publication US 2023/0187458 A1, Jun. 15, 2023
Int. Cl. H01L 27/14 (2006.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01)
CPC H01L 27/1251 (2013.01) [H01L 29/41733 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A display panel, comprising transistors in a display region, the transistors comprising a main transistor, an auxiliary transistor, and a voltage divider transistor, and the transistors comprising a channel located above a semiconductor layer and a source electrode and a drain electrode located on an electrode layer;
wherein the drain electrode comprises a drain electrode tip region, and an orthographic projection of the drain electrode tip region on the semiconductor layer is located outside the channel;
wherein the source electrode comprises a source electrode tip region, and an orthographic projection of the source electrode tip region on the semiconductor layer is located outside the channel;
wherein the transistors comprise the main transistor, the main transistor comprises a first channel located in the semiconductor layer and a first source electrode and a first drain electrode located on the electrode layer;
wherein the first drain electrode comprises a first drain electrode tip region, and an orthographic projection of the first drain electrode tip region on the semiconductor layer is located outside the first channel;
wherein the first source electrode comprises a first source electrode tip region, and an orthographic projection of the first source electrode tip region on the semiconductor layer is located outside the first channel;
wherein the first channel comprises a first aperture, and the orthographic projection of the first drain electrode tip region on the semiconductor layer is located in the first aperture.