CPC H01L 27/124 (2013.01) [H01L 21/6835 (2013.01); H01L 27/1248 (2013.01); H01L 27/1259 (2013.01)] | 15 Claims |
1. A manufacturing method of an electronic device, comprising:
forming a circuit layer on a base layer, the circuit layer comprising a thin-film transistor;
disposing an insulation layer on the circuit layer;
transferring a light emitting element over the circuit layer such that the insulation layer is disposed between the light emitting element and the circuit layer;
drying the insulation layer so as to attach the light emitting element with the insulation layer and the and thin-film transistor;
forming a first insulation layer disposed between the light emitting element and the ciruit layer by patterning the insulation layer;
disposing a second insulation layer on the circuit layer and around the light emitting element and the first insulation layer; and
forming a connection electrode directly in contact with the light emitting element and electrically connecting the light emitting element and the circuit layer, wherein
a bottom surface of the light emitting element is in contact with the first insulation layer, and the connection electrode is in contact with an upper surface of the light emitting element opposing the bottom surface of the light emitting element, and
in a plan view, an area of the first insulation layer corresponds to an area of the light emitting element so as to have a same size as that of the light emitting element.
|