CPC H01L 24/08 (2013.01) [H01L 24/80 (2013.01); H01L 2224/08057 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01)] | 4 Claims |
1. A microelectronic assembly, comprising:
a first substrate having a first surface;
a second substrate having a second surface, the first surface of the first substrate intimately bonded to the second surface of the second substrate; and
a bonded conductive interconnect disposed at the first surface and the second surface, the bonded conductive interconnect comprising at least a first conductive material embedded into the first substrate, a second conductive material embedded into the second substrate, and an electrically conductive fill region disposed between the first conductive material and the second conductive material, wherein the fill region comprises a non-linear mass that includes a third conductive material, and wherein the third conductive material has a higher melting point than a melting point of the first conductive material or the second conductive material.
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