CPC H01L 23/5389 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/214 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01)] | 20 Claims |
1. A method of manufacturing a semiconductor device, the method comprising:
adhering a semiconductor die to a first layer with an adhesive different from the first layer;
encapsulating the semiconductor die and through vias with an encapsulant;
removing the adhesive from the semiconductor die, wherein the removing the adhesive additionally forms recesses which expose at least a portion of a sidewall of the semiconductor die;
placing an interface material over the semiconductor die;
placing an underfill material around the interface material, wherein the underfill material fills the recess; and
placing a package in physical contact with the interface material.
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