CPC H01L 23/4924 (2013.01) [H01L 21/4871 (2013.01)] | 22 Claims |
1. A method for a semiconductor package comprising:
performing a material removal operation on a baseplate at a region of a surface of the baseplate to produce a recess in the baseplate, the recess including a recess base, a first sidewall, and a second sidewall;
receiving a substrate, the substrate including:
a dielectric layer;
a first metal layer disposed on a first surface of the dielectric layer; and
a second metal layer disposed on a second surface of the dielectric layer; and
attaching the substrate to a surface of the recess base of the recess via a conductive-bonding component, the surface of the recess base being contiguous with the first sidewall.
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