US 12,131,959 B2
Systems and methods for improved metrology for semiconductor device wafers
Liran Yerushalmi, Zicron Yaacob (IL); Daria Negri, Haifa (IL); Ohad Bachar, Timrat (IL); Yossi Simon, Qiryat Atta (IL); Amnon Manassen, Haifa (IL); Nir Ben David, Hod Hasharon (IL); Yoram Uziel, Yodfat (IL); and Etay Lavert, Givat Ella (IL)
Assigned to KLA Corporation, Milpitas, CA (US)
Filed by KLA Corporation, Milpitas, CA (US)
Filed on Sep. 8, 2021, as Appl. No. 17/469,280.
Claims priority of provisional application 63/177,966, filed on Apr. 22, 2021.
Prior Publication US 2022/0344218 A1, Oct. 27, 2022
Int. Cl. H01L 21/66 (2006.01); G05B 19/418 (2006.01)
CPC H01L 22/12 (2013.01) [G05B 19/41875 (2013.01); G05B 2219/45031 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A method of generating a quality parameter value of a semiconductor device wafer (SDW), during fabrication thereof, the method comprising:
designating a plurality of measurement site sets (MSSs) on said SDW, each of said MSSs comprising a first measurement-orientation site (FMS) and a second measurement-orientation site (SMS), said FMS and said SMS being different measurement sites on said SDW;
measuring features formed within each FMS of at least one of said MSSs in a first measurement orientation using incident radiation to generate a first measurement-orientation quality parameter dataset (FMQPD);
measuring features formed within each said SMS of said at least one of said MSSs in a second measurement orientation using said incident radiation to generate a second measurement-orientation quality parameter dataset (SMQPD); and
generating at least one tool-induced-shift (TIS)-ameliorated quality parameter value (TAQPV), at least partially based on said FMQPD and said SMQPD.