US 12,131,911 B2
CMP process and methods thereof
Che-Lun Chang, Hsinchu (TW); Pin-Chuan Su, Hsinchu (TW); Hsin-Chieh Huang, Taoyuan (TW); Ming-Yuan Wu, Hsinchu (TW); Tzu kai Lin, Tainan (TW); Yu-Wen Wang, New Taipei (TW); and Che-Yuan Hsu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 20, 2022, as Appl. No. 17/844,563.
Application 17/844,563 is a continuation of application No. 17/193,693, filed on Mar. 5, 2021, granted, now 11,387,109.
Prior Publication US 2022/0367200 A1, Nov. 17, 2022
Int. Cl. H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/30625 (2013.01) [H01L 21/02447 (2013.01); H01L 21/02532 (2013.01); H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 29/66636 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
forming a first hard mask layer on a first epitaxial layer;
patterning an opening in the first hard mask layer;
forming a recess in the first epitaxial layer by transferring a pattern of the opening in the first hard mask layer to the first epitaxial layer;
depositing a second epitaxial layer in the recess; and
after depositing the second epitaxial layer in the recess, selectively removing the first hard mask layer using an etching process that comprises etching with hydrofluoric acid.