US 12,131,909 B2
Selective processing with etch residue-based inhibitors
Kashish Sharma, Tigard, OR (US); Taeseung Kim, Fremont, CA (US); Samantha S. H. Tan, Newark, CA (US); and Dennis M. Hausmann, Lake Oswego, OR (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Oct. 12, 2023, as Appl. No. 18/485,749.
Application 18/485,749 is a continuation of application No. 15/733,366, granted, now 11,823,909, previously published as PCT/US2019/013640, filed on Jan. 15, 2019.
Claims priority of provisional application 62/617,616, filed on Jan. 16, 2018.
Prior Publication US 2024/0038539 A1, Feb. 1, 2024
Int. Cl. H01L 21/285 (2006.01); C23C 16/04 (2006.01); C23C 16/06 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/28562 (2013.01) [C23C 16/04 (2013.01); C23C 16/06 (2013.01); C23C 16/45534 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/505 (2013.01); C23C 16/52 (2013.01); H01L 21/0212 (2013.01); H01L 21/02175 (2013.01); H01L 21/02189 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of conducting a deposition on a semiconductor substrate, the method comprising:
selectively depositing a sacrificial material on a semiconductor substrate, the substrate comprising a surface having a plurality of regions of substrate materials having different selectivities for the sacrificial material, such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface;
depositing a non-sacrificial material on the substrate such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on sacrificial material on the first region; and
removing the sacrificial material by ashing or selective etch such that net deposition of the non-sacrificial material occurs substantially only on the second region, and
wherein selectively depositing is performed by chemical vapor deposition, atomic layer deposition or atomic layer etch.