	US 12,131,906 B2
	Method for fabricating silicon carbide semiconductor device and power conversion device using the silicon carbide semiconductor device
Shiro Hino, Tokyo (JP); and Koji Sadamatsu, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 17/789,795
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Feb. 13, 2020, PCT No. PCT/JP2020/005461 § 371(c)(1), (2) Date Jun. 29, 2022, PCT Pub. No. WO2021/161436, PCT Pub. Date Aug. 19, 2021.
Prior Publication US 2023/0036221 A1, Feb. 2, 2023
Int. Cl. H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H02M 1/08 (2006.01); H02M 7/5387 (2007.01); H02P 27/08 (2006.01)

CPC H01L 21/045 (2013.01) [H01L 21/0485 (2013.01); H01L 29/1608 (2013.01); H01L 29/45 (2013.01); H01L 29/66068 (2013.01); H01L 29/7806 (2013.01); H02M 1/08 (2013.01); H02M 7/53871 (2013.01); H02P 27/08 (2013.01)]

20 Claims

1. A fabrication method for a silicon carbide semiconductor device, the method comprising:

forming a dielectric film over part of a silicon carbide layer;

forming an ohmic electrode adjoining the dielectric film on the silicon carbide layer;

removing an oxidized layer on the ohmic electrode;

forming a mask with its opening on the side opposite to the side where the ohmic electrode is adjoining the dielectric film on the ohmic electrode having the oxidized layer removed and on the dielectric film;

wet etching of a film to be etched with hydrofluoric acid with the mask formed; and

removing the mask after the wet etching of the film.