US 12,131,905 B2
Graphene structure and method of forming the graphene structure
Keunwook Shin, Yongin-si (KR); Kyungeun Byun, Seongnam-si (KR); Hyeonjin Shin, Suwon-si (KR); Soyoung Lee, Yongin-si (KR); and Changseok Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 8, 2020, as Appl. No. 16/923,478.
Claims priority of application No. 10-2020-0001570 (KR), filed on Jan. 6, 2020.
Prior Publication US 2021/0210346 A1, Jul. 8, 2021
Int. Cl. H01L 21/02 (2006.01); C23C 16/26 (2006.01); C23C 16/50 (2006.01); H01L 29/16 (2006.01)
CPC H01L 21/02527 (2013.01) [C23C 16/26 (2013.01); C23C 16/50 (2013.01); H01L 21/02422 (2013.01); H01L 21/02425 (2013.01); H01L 21/0262 (2013.01); H01L 29/1606 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A graphene structure comprising:
a substrate,
a material of the substrate including a semiconductor material, a metal material, or an inorganic insulating material; and
a directly grown graphene that is directly grown on a surface of the substrate and has a controlled surface energy, wherein
the directly grown graphene has a water contact angle of less than or equal to about 60 degrees with respect to the surface of the substrate, and
the directly grown graphene is directly on the material of the substrate such that the directly grown graphene is in contact with the semiconductor material, the metal material, or the inorganic insulating material of the substrate, and
the directly grown graphene has a domain size of greater than 0 nm and less than or equal to 100 nm.