US 12,131,900 B2
Methods for depositing blocking layers on metal surfaces
Bhaskar Jyoti Bhuyan, San Jose, CA (US); Mark Saly, Santa Clara, CA (US); Lakmal C. Kalutarage, San Jose, CA (US); and Thomas Joseph Knisley, Livonia, MI (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jul. 26, 2022, as Appl. No. 17/873,793.
Application 17/873,793 is a division of application No. 16/632,164, granted, now 11,417,515, previously published as PCT/US2018/042467, filed on Jul. 17, 2018.
Claims priority of provisional application 62/533,890, filed on Jul. 18, 2017.
Prior Publication US 2022/0384176 A1, Dec. 1, 2022
Int. Cl. C23C 16/00 (2006.01); C23C 16/02 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/0217 (2013.01) [C23C 16/0245 (2013.01); C23C 16/308 (2013.01); C23C 16/45525 (2013.01); H01L 21/02118 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01); H01L 21/02315 (2013.01); H01L 21/31138 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of selectively depositing a blocking layer, the method comprising:
exposing a substrate having a metal surface and a dielectric surface to an epoxide to selectively form a blocking layer on the metal surface, wherein the epoxide is substituted;
selectively depositing a silicon nitride layer on the dielectric surface;
repeating exposure of the substrate to a silane to deposit the silicon nitride layer until the silicon nitride layer has reached a predetermined thickness; and
removing the blocking layer from the substrate by sequential exposure of the substrate to an oxygen plasma and a hydrogen plasma.