US 12,131,899 B2
Method of deposition
Tristan Harper, Newport (GB); and Kathrine Crook, Newport (GB)
Assigned to SPTS Technology Limited, Newport (GB)
Filed by SPTS Technologies Limited, Newport (GB)
Filed on May 20, 2021, as Appl. No. 17/326,273.
Claims priority of application No. 2008892 (GB), filed on Jun. 11, 2020.
Prior Publication US 2021/0391170 A1, Dec. 16, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 23/00 (2006.01)
CPC H01L 21/02167 (2013.01) [H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 24/83 (2013.01); H01L 2224/83896 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of depositing a hydrogenated silicon carbon nitride (SiCN:H) film onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising:
providing the substrate in a chamber of a parallel plate PECVD apparatus;
introducing silane (SiH4), a carbon-donating precursor, and nitrogen gas (N2) into the chamber, wherein the silane (SiH4) is introduced into the chamber at a flow rate greater than a flow rate of the carbon-donating precursor, and wherein the flow rate for the silane (SiH4) and the flow rate for the carbon-donating precursor are independently controlled during the introducing; and
sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD, wherein the substrate is maintained at a temperature of less than about 250° C., and wherein the chamber has a pressure in the range of 1-5 Torr whilst the plasma is being sustained in the chamber.