US 12,131,898 B2
Bonded semiconductor structures
Jing-Cheng Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on May 16, 2022, as Appl. No. 17/745,182.
Application 17/745,182 is a division of application No. 16/866,131, filed on May 4, 2020, granted, now 11,335,553.
Application 16/866,131 is a division of application No. 15/843,400, filed on Dec. 15, 2017, granted, now 10,643,836, issued on May 5, 2020.
Application 15/843,400 is a continuation of application No. 13/945,217, filed on Jul. 18, 2013, granted, now 9,859,112, issued on Jan. 2, 2018.
Prior Publication US 2022/0277954 A1, Sep. 1, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/762 (2006.01); H01L 21/822 (2006.01); H01L 23/48 (2006.01); H01L 27/06 (2006.01)
CPC H01L 21/02104 (2013.01) [H01L 21/8221 (2013.01); H01L 27/0688 (2013.01); H01L 21/2007 (2013.01); H01L 21/76254 (2013.01); H01L 23/481 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/14 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
bonding an epitaxial layer formed with a first semiconductor substrate and an ion-implanted layer that is formed between the epitaxial layer and the first semiconductor substrate, to a bonding oxide layer of a second semiconductor substrate;
separating the first semiconductor substrate from the epitaxial layer, by removing the first semiconductor substrate together with a portion of the ion-implanted layer and keeping the epitaxial layer; and
forming a first semiconductor device portion on the epitaxial layer, and an interconnect layer on the first semiconductor device portion.