US 12,131,887 B2
Plasma processing system and method using radio frequency and microwave power
Yunho Kim, Cohes, NY (US); Yanxiang Shi, Clifton Park, NY (US); and Mingmei Wang, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on May 4, 2021, as Appl. No. 17/307,654.
Claims priority of provisional application 63/145,048, filed on Feb. 3, 2021.
Prior Publication US 2022/0246402 A1, Aug. 4, 2022
Int. Cl. H01J 37/32 (2006.01); H01J 37/18 (2006.01); H01L 21/67 (2006.01)
CPC H01J 37/32266 (2013.01) [H01J 37/18 (2013.01); H01J 37/32091 (2013.01); H01J 37/3211 (2013.01); H01J 37/32119 (2013.01); H01J 37/3222 (2013.01); H01J 37/32229 (2013.01); H01J 37/32715 (2013.01); H01J 2237/327 (2013.01); H01J 2237/334 (2013.01); H01L 21/67069 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A plasma processing system comprising:
a vacuum system;
a plasma processing chamber comprising:
a chamber cavity coupled to the vacuum system; and
a substrate holder comprising a surface inside the chamber cavity;
a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the chamber cavity;
a microwave source coupled to a microwave oscillator; and
an electromagnetic (EM) metasurface, the EM metasurface having a major surface electromagnetically coupled to the microwave source, the major surface configured to couple microwave power to the plasma in the chamber cavity.