US 12,131,852 B2
Magnetoelectronic device comprising ferrite-based nanocomposite
Yassine Slimani, Dammam (SA); Munirah Abdullah Almessiere, Dammam (SA); and Abdulhadi Baykal, Dammam (SA)
Assigned to Imam Abdulrahman Bin Faisal University, Dammam (SA)
Filed by Imam Abdulrahman Bin Faisal University, Dammam (SA)
Filed on Nov. 28, 2023, as Appl. No. 18/520,645.
Application 18/520,645 is a continuation of application No. 17/314,087, filed on May 7, 2021, granted, now 11,869,693.
Prior Publication US 2024/0096532 A1, Mar. 21, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01F 1/34 (2006.01); H01F 1/36 (2006.01); H01F 7/06 (2006.01); B82Y 25/00 (2011.01); B82Y 40/00 (2011.01)
CPC H01F 1/342 (2013.01) [H01F 7/06 (2013.01); B82Y 25/00 (2013.01); B82Y 40/00 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A magnetoelectronic device in the form of a computer memory device selected from the group consisting of a magnetic random access memory and a multiferroic random access memory, comprising:
a nanocomposite composition comprising:
a ferroelectric perovskite oxide, and
a rare-earth substituted mixed ternary transition metal ferrite of the formula
A1-xBxRyFe2-yO4,
wherein A and B represent different transition metals;
0<x<1;
R is thulium;
0<y<0.2; and
the rare-earth substituted mixed ternary transition metal ferrite is superparamagnetic at 0 to 50° C.