| CPC G11C 16/3459 (2013.01) [G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01)] | 18 Claims |
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1. A method of operating a nonvolatile memory device, comprising:
grouping aggressor memory cells connected to one or more aggressor wordlines into a plurality of aggressor cell groups by performing a read operation with respect to the aggressor wordlines based on one or more grouping read voltages, the aggressor wordlines being adjacent to a selected wordline corresponding to a read address among a plurality of wordlines of a memory block;
grouping selected memory cells connected to the selected wordline into a plurality of selected cell groups respectively corresponding to the plurality of aggressor cell groups;
determining a plurality of group read conditions respectively corresponding to the plurality of selected cell groups; and
performing a plurality of group read operations with respect to the plurality of selected cell groups based on the plurality of group read conditions,
wherein the aggressor wordlines include a main aggressor wordline adjacent to the selected wordline in a first direction and a sub aggressor wordline adjacent to the selected wordline in a second direction opposite to the first direction, and
wherein the main aggressor wordline is programmed after the selected wordline is programmed, and the sub aggressor wordline is programmed before the selected wordline is programmed.
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