US 12,131,769 B2
Sub-word line driver having common gate boosted voltage
Tae H. Kim, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 11, 2022, as Appl. No. 17/886,217.
Prior Publication US 2024/0055043 A1, Feb. 15, 2024
Int. Cl. G11C 11/408 (2006.01)
CPC G11C 11/4085 (2013.01) 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a boost driver configured to generate a boosting signal; and
a capacitor configured to receive the boosting signal, wherein the capacitor is coupled to a phase signal via a common boost node used by a plurality of sub-word line drivers (SWDs) to couple to the phase signal, and wherein the capacitor is configured to provide a boost voltage to the plurality of SWDs, via the common boost node, when a global word line coupled to a particular sub-word line driver of the plurality of SWDs is at a first value.