US 12,131,708 B2
Method of driving light emitting diode backlight unit and display device performing the same
Hyunji Yoon, Suwon-si (KR); Yangwook Kim, Suwon-si (KR); Kyungchun Kim, Suwon-si (KR); Sukyun Woo, Suwon-si (KR); Pansoo Kim, Suwon-si (KR); Byungil Kim, Suwon-si (KR); Hyeongtae Kim, Suwon-si (KR); and Jisu Yoon, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Dec. 6, 2023, as Appl. No. 18/530,891.
Application 18/530,891 is a continuation of application No. 18/068,861, filed on Dec. 20, 2022, granted, now 11,875,755.
Claims priority of application No. 10-2022-0005908 (KR), filed on Jan. 14, 2022; and application No. 10-2022-0048094 (KR), filed on Apr. 19, 2022.
Prior Publication US 2024/0105130 A1, Mar. 28, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G09G 3/34 (2006.01); G09G 3/32 (2016.01)
CPC G09G 3/3406 (2013.01) [G09G 3/32 (2013.01); G09G 2300/0819 (2013.01); G09G 2310/0202 (2013.01); G09G 2330/021 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A backlight driver, comprising:
a pixel driver configured to generate a plurality of gate signals applied to a plurality of gate lines and generate a plurality of source signals applied to a plurality of source lines; and
a plurality of pixel circuits connected to the pixel driver through the plurality of gate lines and the plurality of source lines, and configured to generate a plurality of driving currents based on the plurality of gate signals and the plurality of source signals,
wherein the pixel driver is configured to
generate, while the plurality of gate signals are generated, a non-overlap interval between activation intervals of two adjacent gate signals, all of the plurality of gate signals being deactivated during the non-overlap interval, and
generate, while the plurality of source signals are generated, a high-impedance interval exclusively in the non-overlap interval, at least some of the plurality of source signals having a high-impedance state during the high-impedance interval.