US 12,131,252 B2
Neuromorphic device
Shogo Yamada, Tokyo (JP); and Tatsuo Shibata, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on Oct. 21, 2021, as Appl. No. 17/507,561.
Claims priority of application No. PCT/JP2020/039957 (WO), filed on Oct. 23, 2020.
Prior Publication US 2022/0188618 A1, Jun. 16, 2022
Int. Cl. G06N 3/065 (2023.01); G11C 11/16 (2006.01); G11C 11/54 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01)
CPC G06N 3/065 (2023.01) [G11C 11/161 (2013.01); G11C 11/1675 (2013.01); G11C 11/54 (2013.01); H10B 61/00 (2023.02); H10N 50/80 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A neuromorphic device comprising:
a first element group; and
a second element group,
wherein each of the first element group and the second element group includes a plurality of magnetic domain wall movement elements,
wherein each of the plurality of magnetic domain wall movement elements includes a magnetic domain wall movement layer, a ferromagnetic layer, and a non-magnetic layer interposed between the magnetic domain wall movement layer and the ferromagnetic layer,
wherein a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the first element group in a longitudinal direction is shorter than a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the second element group in the longitudinal direction, and
wherein a resistance changing rate when a predetermined pulse is input is higher for each of the magnetic domain wall movement elements belonging to the first element group than for each of the magnetic domain wall movement elements belonging to the second element group.