US 12,130,508 B2
Quantum dots and devices including the same
Tae Gon Kim, Hwaseong-si (KR); Garam Park, Seoul (KR); Jooyeon Ahn, Suwon-si (KR); Shang Hyeun Park, Yongin-si (KR); and Shin Ae Jun, Seongnam-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Gyeonggi-do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 1, 2024, as Appl. No. 18/429,592.
Application 18/220,364 is a division of application No. 16/697,650, filed on Nov. 27, 2019, granted, now 11,740,495, issued on Aug. 29, 2023.
Application 18/429,592 is a continuation of application No. 18/220,364, filed on Jul. 11, 2023, granted, now 11,927,838.
Claims priority of application No. 10-2018-0151184 (KR), filed on Nov. 29, 2018.
Prior Publication US 2024/0176171 A1, May 30, 2024
Int. Cl. C09K 11/62 (2006.01); B82Y 20/00 (2011.01); C09K 11/02 (2006.01); C09K 11/08 (2006.01); C09K 11/88 (2006.01); G02F 1/017 (2006.01); H01L 33/06 (2010.01); H01L 33/28 (2010.01); H01L 33/30 (2010.01); H01L 33/34 (2010.01); H10K 50/115 (2023.01)
CPC G02F 1/01716 (2013.01) [B82Y 20/00 (2013.01); C09K 11/02 (2013.01); C09K 11/025 (2013.01); C09K 11/0811 (2013.01); C09K 11/0883 (2013.01); C09K 11/62 (2013.01); C09K 11/883 (2013.01); H01L 33/06 (2013.01); H01L 33/28 (2013.01); H01L 33/30 (2013.01); H01L 33/34 (2013.01); H10K 50/115 (2023.02); G02F 1/01791 (2021.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor nanocrystal, comprising
reacting an aluminum chloride with a Lewis base to obtain an acid base adduct comprising the aluminum and chlorine; and
in the presence of a semiconductor nanocrystal particle comprising a core, reacting a zinc precursor not comprising a halogen and a sulfur precursor in the presence of the acid base adduct and zinc chloride to form the semiconductor nanocrystal comprising zinc and sulfur,
wherein an amount of the aluminum chloride is about 10 mole percent to about 100 mole percent, based on a total number of moles of the sulfur precursor and an amount of the zinc chloride is about 10 mole percent to about 100 mole percent, based on a total number of moles of the sulfur precursor.