| CPC C30B 29/06 (2013.01) [C30B 29/64 (2013.01); C30B 30/00 (2013.01); C30B 33/06 (2013.01)] | 8 Claims |
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1. A manufacturing method of a single-crystal silicon substrate by which the single-crystal silicon substrate is manufactured from a single-crystal silicon ingot manufactured in such a manner that a crystal plane {100} is exposed in each of a front surface and a back surface, the manufacturing method comprising:
a holding step of holding the single-crystal silicon ingot whose side of the back surface is placed on a holding surface of a holding table by the holding table;
a separation layer forming step of irradiating the single-crystal silicon ingot with a laser beam with such a wavelength as to be transmitted through single-crystal silicon from a side of the front surface while moving a focal point of the laser beam and the single-crystal silicon ingot relative to each other along a first direction that is parallel to the holding surface and that is inclined at an acute angle of equal to or smaller than 5° with a crystal orientation <100> of the single-crystal silicon ingot, in a state in which the focal point is positioned inside the single-crystal silicon ingot, to form a separation layer in a linear region along the first direction inside the single-crystal silicon ingot;
an indexing feed step of moving a position inside the single-crystal silicon ingot at which the focal point is formed by irradiation with the laser beam when the separation layer forming step is executed again along a second direction that is parallel to the holding surface and is orthogonal to the first direction; and
a splitting-off step of splitting off the single-crystal silicon substrate from the single-crystal silicon ingot with use of the separation layers as a point of origin after repeatedly executing the separation layer forming step and the indexing feed step to form the separation layers from a region on one end side in the second direction inside the single-crystal silicon ingot to a region on the other end side.
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