US 12,129,569 B2
Method for conditioning semiconductor processing chamber components
Lin Xu, Fremont, CA (US); David Joseph Wetzel, Santa Clara, CA (US); John Daugherty, Fremont, CA (US); Hong Shih, Cupertino, CA (US); Satish Srinivasan, Newark, CA (US); Yuanping Song, Newark, CA (US); Johnny Pham, San Jose, CA (US); Yiwei Song, Morgan Hill, CA (US); and Christopher Kimball, San Jose, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/795,509
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Feb. 16, 2021, PCT No. PCT/US2021/018204
§ 371(c)(1), (2) Date Jul. 26, 2022,
PCT Pub. No. WO2021/167897, PCT Pub. Date Aug. 26, 2021.
Claims priority of provisional application 62/978,610, filed on Feb. 19, 2020.
Prior Publication US 2023/0092570 A1, Mar. 23, 2023
Int. Cl. C25D 7/04 (2006.01); C25D 3/44 (2006.01); C25D 5/48 (2006.01); C25D 11/08 (2006.01); H01J 37/32 (2006.01); H01L 21/683 (2006.01)
CPC C25D 7/04 (2013.01) [C25D 3/44 (2013.01); C25D 5/48 (2013.01); C25D 11/08 (2013.01); H01J 37/32642 (2013.01); H01J 37/32715 (2013.01); H01L 21/6833 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/334 (2013.01); Y10T 428/12542 (2015.01); Y10T 428/12576 (2015.01); Y10T 428/12583 (2015.01); Y10T 428/12667 (2015.01); Y10T 428/12806 (2015.01)] 7 Claims
OG exemplary drawing
 
1. A component for use in a semiconductor processing chamber, comprising:
a component body made of an electrically conductive silicon containing material having coefficient of thermal expansion of less than 10.0×10−6/K;
a conformal aluminum barrier layer over a surface of the component body; and
an aluminum oxide layer disposed over a surface of the aluminum barrier layer, wherein the aluminum oxide layer has a thickness between about 12 μm to 38 μm.